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1. product pro?le 1.1 general description the BF1208 is a combination of two dual gate mosfet ampli?ers with shared source and gate2 leads and an integrated switch. the integrated switch is operated by the gate1 bias of ampli?er b. the source and substrate are interconnected. internal bias circuits enable dc stabilization and a very good cross-modulation performance during automatic gain control (agc). integrated diodes between the gates and source protect against excessive input voltage surges. the transistor has a sot666 micro-miniature plastic package. 1.2 features n two low noise gain controlled ampli?ers in a single package. one with a fully integrated bias and one with a partly integrated bias n internal switch to save external components n superior cross-modulation performance during agc n high forward transfer admittance n high forward transfer admittance to input capacitance ratio 1.3 applications n gain controlled low noise ampli?ers for vhf and uhf applications with 5 v supply voltage u digital and analog television tuners u professional communication equipment BF1208 dual n-channel dual gate mosfet rev. 01 16 march 2005 product data sheet caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling. msc895
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 2 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 1.4 quick reference data [1] t sp is the temperature at the soldering point of the source lead. 2. pinning information table 1: quick reference data per mosfet unless otherwise speci?ed. symbol parameter conditions min typ max unit v ds drain-source voltage (dc) - - 6 v i d drain current (dc) - - 30 ma p tot total power dissipation t sp 109 c [1] - - 180 mw | y fs | forward transfer admittance f = 1 mhz ampli?er a; i d =19ma 26 31 41 ms ampli?er b; i d =13ma 28 33 43 ms c iss(g1) input capacitance at gate1 f = 1 mhz ampli?er a - 2.2 2.7 pf ampli?er b - 2.0 2.5 pf c rss reverse transfer capacitance f = 1 mhz - 20 - ff nf noise ?gure ampli?er a; f = 400 mhz - 1.3 1.9 db ampli?er b; f = 800 mhz - 1.4 2.1 db xmod cross-modulation input level for k = 1 % at 40 db agc ampli?er a 100 105 - db m v ampli?er b 100 103 - db m v t j junction temperature - - 150 c table 2: discrete pinning pin description simpli?ed outline symbol 1 gate1 (amp a) 2 gate2 3 gate1 (amp b) 4 drain (amp b) 5 source 6 drain (amp a) 123 4 5 6 sym089 g1b g1a g2 s da db amp b amp a
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 3 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 3. ordering information 4. marking 5. limiting values [1] t sp is the temperature at the soldering point of the source lead. table 3: ordering information type number package name description version BF1208 - plastic surface mounted package; 6 leads sot666 table 4: marking codes type number marking code BF1208 2l table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mosfet v ds drain-source voltage (dc) - 6 v i d drain current (dc) - 30 ma i g1 gate1 current - 10 ma i g2 gate2 current - 10 ma p tot total power dissipation t sp 109 c [1] - 180 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c fig 1. power derating curve t sp (?c) 0 200 150 50 100 001aac193 100 150 50 200 250 p tot (mw) 0
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 4 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 6. thermal characteristics 7. static characteristics [1] r g1 connects gate1 (b) to v gg = 0 v (see figure 3 ). [2] r g1 connects gate1 (b) to v gg = 5 v (see figure 3 ). table 6: thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 225 k/w table 7: static characteristics t j =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit per mosfet; unless otherwise speci?ed v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 m a ampli?er a 6 - - v ampli?er b 6 - - v v (br)g1-ss gate1-source breakdown voltage v g2-s =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate2-source breakdown voltage v g1-s =v ds =0v; i g2-s =10ma 6 - 10 v v f(s-g1) forward source-gate1 voltage v g2-s =v ds =0v; i s-g1 = 10 ma 0.5 - 1.5 v v f(s-g2) forward source-gate2 voltage v g1-s =v ds =0v; i s-g2 = 10 ma 0.5 - 1.5 v v g1-s(th) gate1-source threshold voltage v ds =5v; v g2-s =4v; i d = 100 m a 0.3 - 1.0 v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d = 100 m a 0.4 - 1.0 v i dsx drain-source current v g2-s =4v; v ds(b) =5v; r g1 = 150 k w ampli?er a; v ds(a) =5v [1] 14 - 24 ma ampli?er b; v ds(b) =5v [2] 9 - 17 ma i g1-s gate1 cut-off current v g2-s =v ds(a) =0v ampli?er a; v g1-s(a) =5v; i d(b) =0a - - 50 na ampli?er b; v g1-s(b) =5v; v ds(b) = 0 v - - 50 na i g2-s gate2 cut-off current v g2-s =4v; v g1-s(b) =0v; v g1-s(a) =v ds(a) =v ds(b) =0v - - 20 na
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 5 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 8. dynamic characteristics 8.1 dynamic characteristics for ampli?er a (1) i d(b) ; r g1 = 120 k w . (2) i d(b) ; r g1 = 150 k w . (3) i d(b) ; r g1 = 180 k w . (4) i d(a) ; r g1 = 180 k w . (5) i d(a) ; r g1 = 150 k w . (6) i d(a) ; r g1 = 120 k w . v gg = 5 v: ampli?er a is off; ampli?er b is on. v gg = 0 v: ampli?er a is on; ampli?er b is off. fig 2. drain currents of mosfet a and b as a function of gate1 supply voltage fig 3. functional diagram 001aaa552 8 12 4 16 20 i d (ma) 0 v gg (v) 05 4 23 1 (2) (5) (4) (6) (3) (1) 001aac205 r g1 v gg g1b g2 g1a db s da table 8: dynamic characteristics for ampli?er a [1] common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 19 ma; unless otherwise speci?ed. symbol parameter conditions min typ max unit | y fs | forward transfer admittance t j =25 c263141ms c iss(g1) input capacitance at gate1 f = 1 mhz - 2.2 2.7 pf c iss(g2) input capacitance at gate2 f = 1 mhz - 3.0 - pf c oss output capacitance f = 1 mhz - 0.9 - pf c rss reverse transfer capacitance f = 1 mhz - 20 - ff g tr power gain b s =b s(opt) ; b l =b l(opt) f = 200 mhz; g s = 2 ms; g l = 0.5 ms 32 36 40 db f = 400 mhz; g s = 2 ms; g l = 1 ms 28 32 36 db f = 800 mhz; g s = 3.3 ms; g l =1ms 23 27 32 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s = 0 s - 3.0 - db f = 400 mhz; y s =y s(opt) - 1.3 1.9 db f = 800 mhz; y s =y s(opt) - 1.4 2.1 db
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 6 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet [1] for the mosfet not in use: v g1-s(b) = 0 v; v ds(b) =0v. [2] measured in figure 33 test circuit. 8.1.1 graphics for ampli?er a xmod cross-modulation input level for k = 1 %; f w = 50 mhz; f unw =60mhz [2] at 0 db agc 90 - - db m v at 10 db agc - 90 - db m v at 20 db agc - 99 - db m v at 40 db agc 100 105 - db m v table 8: dynamic characteristics for ampli?er a [1] continued common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 19 ma; unless otherwise speci?ed. symbol parameter conditions min typ max unit (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 c. (1) v g1-s(a) = 1.8 v. (2) v g1-s(a) = 1.7 v. (3) v g1-s(a) = 1.6 v. (4) v g1-s(a) = 1.5 v. (5) v g1-s(a) = 1.4 v. (6) v g1-s(a) = 1.3 v. (7) v g1-s(a) = 1.2 v. (8) v g1-s(a) = 1.1 v. (9) v g1-s(a) =1v. v g2-s =4v; v g1-s(b) =v ds(b) =0v; t j =25 c. fig 4. ampli?er a: transfer characteristics; typical values fig 5. ampli?er a: output characteristics; typical values v g1-s (v) 02 1.6 0.8 1.2 0.4 001aaa554 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (7) (6) 001aaa555 v ds (v) 06 4 2 16 8 24 32 i d (ma) 0 (2) (3) (4) (6) (7) (9) (8) (5) (1)
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 7 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 c. v ds(a) =5v; v g2-s =4v; v ds(b) =5v; v g1-s(b) =0v; t j =25 c. i d(b) = internal g1 current = current in pin drain (b) if mosfet (b) is switched off. fig 6. ampli?er a: forward transfer admittance as a function of drain current; typical values fig 7. ampli?er a: drain current as a function of internal g1 current; typical values i d (ma) 032 24 816 001aaa556 20 10 30 40 y fs (ms) 0 (1) (2) (3) (4) (5) (6) 001aac206 i d(b) ( m a) 060 40 20 8 12 4 16 20 i d(a) (ma) 0
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 8 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet v ds(a) =v ds(b) =v supply ; v g2-s =4v; t j =25 c; r g1 = 150 k w (connected to ground); see figure 3 . (1) v ds(b) =5v. (2) v ds(b) = 4.5 v. (3) v ds(b) =4v. (4) v ds(b) = 3.5 v. (5) v ds(b) =3v. (6) v ds(b) = 2.5 v. v ds(a) =5v; v g1-s(b) = 0 v; gate1 (a) = open; t j =25 c. fig 8. ampli?er a: drain current of ampli?er a as a function of supply voltage of a and b ampli?er; typical values fig 9. ampli?er a: drain current as a function of gate2 voltage; typical values v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 33 . v ds(a) =v ds(b) =5v; v g1-s(b) = 0 v; f = 50 mhz; see figure 33 . fig 10. ampli?er a: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values fig 11. ampli?er a: gain reduction as a function of agc voltage; typical values v supply (v) 05 4 23 1 001aaa558 8 12 4 16 20 i d (ma) 0 001aaa559 v g2-s (v) 06 4 2 16 8 24 32 i d (ma) 0 (1) (2) (3) (4) (5) (6) gain reduction (db) 050 40 20 30 10 001aac195 100 90 110 120 v unw (db m v) 80 v agc (v) 04 3 12 001aac196 30 20 40 10 0 gain reduction (db) 50
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 9 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet v ds(a) =v ds(b) =5v; v g1-s(b) = 0 v; f = 50 mhz; t amb =25 c; see figure 33 . v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 12. ampli?er a: drain current as a function of gain reduction; typical values fig 13. ampli?er a: input admittance as a function of frequency; typical values v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 14. ampli?er a: forward transfer admittance and phase as a function of frequency; typical values fig 15. ampli?er a: reverse transfer admittance and phase as a function of frequency; typical values gain reduction (db) 050 40 20 30 10 001aac197 12 20 28 i d (ma) 4 001aac566 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is f (mhz) 10 10 3 10 2 001aac567 10 10 2 |y fs | (ms) 1 - 10 - 10 2 j fs (deg) - 1 |y fs | j fs 001aac568 10 2 10 10 3 |y rs | ( m s) 1 - 10 2 - 10 - 10 3 j rs (deg) - 1 f (mhz) 10 10 3 10 2 |y rs | j rs
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 10 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 8.1.2 scattering parameters for ampli?er a 8.1.3 noise data for ampli?er a v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 16. ampli?er a: output admittance as a function of frequency; typical values 001aac569 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os table 9: scattering parameters for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 19 ma; v ds(b) =0v;v g1-s(b) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.991 - 3.86 3.08 175.91 0.0009 77.41 0.992 - 1.41 100 0.990 - 7.73 3.03 171.76 0.0019 78.10 0.991 - 2.81 200 0.986 - 15.43 2.99 163.68 0.0037 78.39 0.990 - 5.57 300 0.980 - 22.98 2.94 155.54 0.0054 73.53 0.989 - 8.34 400 0.970 - 30.44 2.89 147.55 0.0070 68.74 0.986 - 11.08 500 0.960 - 37.60 2.82 139.76 0.0085 63.64 0.983 - 13.78 600 0.948 - 44.62 2.75 132.16 0.0098 59.62 0.980 - 16.45 700 0.935 - 51.44 2.67 124.70 0.0110 55.09 0.977 - 19.10 800 0.921 - 58.04 2.58 117.39 0.0120 50.79 0.973 - 21.69 900 0.908 - 64.41 2.50 110.20 0.0128 46.62 0.970 - 24.28 1000 0.894 - 70.49 2.40 103.31 0.0135 42.78 0.967 - 26.87 table 10: noise data for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 19 ma; v ds(b) =0v; v g1-s(b) =0v; t amb =25 c; typical values; unless otherwise speci?ed. f (mhz) nf min (db) g opt r n ( w ) ratio (deg) 400 1.3 0.718 16.06 0.683 800 1.4 0.677 37.59 0.681
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 11 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 8.2 dynamic characteristics for ampli?er b [1] for the mosfet not in use: v g1-s(a) = 0 v; v ds(a) =0 v. [2] measured in figure 34 test circuit. table 11: dynamic characteristics for ampli?er b [1] common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 13 ma; unless otherwise speci?ed. symbol parameter conditions min typ max unit | y fs | forward transfer admittance t j =25 c283343ms c iss(g1) input capacitance at gate1 f = 1 mhz - 2.0 2.5 pf c iss(g2) input capacitance at gate2 f = 1 mhz - 3.4 - pf c oss output capacitance f = 1 mhz - 0.85 - pf c rss reverse transfer capacitance f = 1 mhz - 20 - ff g tr power gain b s =b s(opt) ; b l =b l(opt) f = 200 mhz; g s = 2 ms; g l = 0.5 ms 33 37 41 db f = 400 mhz; g s = 2 ms; g l =1ms 30 34 38 db f = 800 mhz; g s = 3.3 ms; g l =1ms 29 33 37 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s =0s - 5 - db f = 400 mhz; y s =y s(opt) - 1.3 1.9 db f = 800 mhz; y s =y s(opt) - 1.4 2.1 db xmod cross-modulation input level for k = 1 %; f w = 50 mhz; f unw =60mhz [2] at 0 db agc 90 - - db m v at 10 db agc - 88 - db m v at 20 db agc - 94 - db m v at 40 db agc 100 103 - db m v
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 12 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 8.2.1 graphics for ampli?er b (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. (1) v g1-s(b) = 1.6 v. (2) v g1-s(b) = 1.5 v. (3) v g1-s(b) = 1.4 v. (4) v g1-s(b) = 1.3 v. (5) v g1-s(b) = 1.2 v. (6) v g1-s(b) = 1.1 v. (7) v g1-s(b) =1v. v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c. fig 17. ampli?er b: transfer characteristics; typical values fig 18. ampli?er b: output characteristics; typical values v g1-s (v) 02 1.6 0.8 1.2 0.4 001aaa568 10 20 30 i d (ma) 0 (4) (5) (6) (7) (2) (3) (1) 001aaa569 v ds (v) 06 4 2 16 8 24 32 i d (ma) 0 (1) (2) (5) (6) (7) (4) (3)
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 13 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. fig 19. ampli?er b: gate1 current as a function of gate1 voltage; typical values fig 20. ampli?er b: forward transfer admittance as a function of drain current; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 = 150 k w (connected to v gg ); see figure 3 . fig 21. ampli?er b: drain current as a function of gate1 current; typical values fig 22. ampli?er b: drain current as a function of gate1 supply voltage; typical values v g1-s (v) 02 1.6 0.8 1.2 0.4 001aaa570 40 60 20 80 100 i g1 ( m a) 0 (1) (2) (4) (6) (7) (3) (5) i d (ma) 032 24 816 001aaa571 20 10 30 40 y fs (ms) 0 (1) (2) (3) (4) (5) (6) (7) i g1 ( m a) 050 40 20 30 10 001aaa572 8 16 24 i d (ma) 0 v gg (v) 05 4 23 1 001aaa573 8 4 12 16 i d (ma) 0
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 14 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet (1) r g1 =68k w . (2) r g1 =82k w . (3) r g1 = 100 k w . (4) r g1 = 120 k w . (5) r g1 = 150 k w . (6) r g1 = 180 k w . (7) r g1 = 220 k w . (8) r g1 = 270 k w . v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 is connected to v gg ; see figure 3 . (1) v gg = 5.0 v. (2) v gg = 4.5 v. (3) v gg = 4.0 v. (4) v gg = 3.5 v. (5) v gg = 3.0 v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 = 150 k w (connected to v gg ); see figure 3 . fig 23. ampli?er b: drain current as a function of gate1 supply voltage and drain supply voltage; typical values fig 24. ampli?er b: drain current as a function of gate2 voltage; typical values 001aaa574 v gg = v ds (v) 06 4 2 8 16 24 i d (ma) 0 (1) (2) (3) (4) (5) (8) (6) (7) 001aaa575 v g2-s (v) 06 4 2 8 4 12 16 i d (ma) 0 (1) (3) (4) (5) (2)
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 15 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet (1) v gg = 5.0 v. (2) v gg = 4.5 v. (3) v gg = 4.0 v. (4) v gg = 3.5 v. (5) v gg = 3.0 v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 = 150 k w (connected to v gg ); see figure 3 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 = 150 k w (connected to v gg ); f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 34 . fig 25. ampli?er b: gate1 current as a function of gate2 voltage; typical values fig 26. ampli?er b: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 = 150 k w (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 34 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 = 150 k w (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 34 . fig 27. ampli?er b: gain reduction as a function of agc voltage; typical values fig 28. ampli?er b: drain current as a function of gain reduction; typical values v g2-s (v) 06 4 2 001aaa576 10 20 30 i g1 ( m a) 0 (1) (2) (4) (5) (3) 001aac198 gain reduction (db) 060 40 20 100 90 110 120 v unw (db m v) 80 v agc (v) 04 3 12 001aac199 30 20 40 10 0 gain reduction (db) 50 gain reduction (db) 050 40 20 30 10 001aac200 8 4 12 16 i d (ma) 0
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 16 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =13ma v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =13ma fig 29. ampli?er b: input admittance as a function of frequency; typical values fig 30. ampli?er b: forward transfer admittance and phase as a function of frequency; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =13ma v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =13ma fig 31. ampli?er b: reverse transfer admittance and phase as a function of frequency; typical values fig 32. ampli?er b: output admittance as a function of frequency; typical values 001aac570 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is f (mhz) 10 10 3 10 2 001aac571 10 10 2 |y fs | (ms) 1 - 10 - 10 2 j fs (deg) - 1 |y fs | j fs 001aac572 10 2 10 10 3 |y rs | ( m s) 1 f (mhz) 10 10 3 10 2 - 10 2 - 10 - 10 3 j rs (deg) - 1 |y rs | j rs 001aac573 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 17 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 8.2.2 scattering parameters for ampli?er b 8.2.3 noise data for ampli?er b table 12: scattering parameters for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 13 ma; v ds(a) =0v;v g1-s(a) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 50 0.985 - 3.42 3.33 176.41 0.0010 87.55 0.988 - 1.60 100 0.984 - 6.96 3.31 172.70 0.0020 83.45 0.988 - 3.16 200 0.980 - 13.51 3.27 165.59 0.0039 82.84 0.987 - 6.31 300 0.975 - 20.07 3.23 158.42 0.0054 82.01 0.986 - 9.40 400 0.969 - 26.61 3.19 151.34 0.0068 79.73 0.984 - 12.46 500 0.961 - 32.89 3.14 144.33 0.0085 77.91 0.982 - 15.57 600 0.955 - 39.19 3.07 137.54 0.0100 76.31 0.980 - 18.62 700 0.945 - 45.39 3.00 130.72 0.0115 73.76 0.977 - 21.70 800 0.938 - 51.39 2.93 123.98 0.0131 71.58 0.974 - 24.76 900 0.930 - 57.36 2.85 117.31 0.0145 69.18 0.971 - 27.81 1000 0.920 - 63.10 2.77 110.39 0.0157 67.54 0.967 - 30.86 table 13: noise data for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 13 ma; v ds(a) =0v; v g1-s(a) =0v; t amb =25 c; typical values; unless otherwise speci?ed. f (mhz) nf min (db) g opt r n ( w ) ratio (deg) 400 1.3 0.695 13.11 0.694 800 1.4 0.674 32.77 0.674
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 18 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 9. test information fig 33. cross-modulation test set-up for ampli?er a fig 34. cross-modulation test set-up for ampli?er b 50 w 10 k w r gen 50 w r l 50 w 50 w r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1b db da 4.7 nf 4.7 nf 4.7 nf g1a BF1208 v gg 0v v ds(b) 5v v ds(a) 5v v agc l2 2.2 m h l1 2.2 m h 001aac201 v i 50 w 10 k w r gen 50 w 50 w r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1b db da 4.7 nf 4.7 nf 4.7 nf g1a BF1208 v gg 5v v ds(b) 5v v ds(a) 5v v agc l2 2.2 m h l1 2.2 m h r l 50 w 001aac202 v i
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 19 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 10. package outline fig 35. package outline sot666 unit b p cd e e 1 h e l p w references outline version european projection issue date 01-08-27 04-11-08 iec jedec jeita mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 dimensions (mm are the original dimensions) 0.3 0.1 sot666 b p pin 1 index d e 1 e a l p detail x h e e a s 0 1 2 mm scale a 0.6 0.5 c x 123 4 5 6 plastic surface mounted package; 6 leads sot666 ys w m a
9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 20 of 22 philips semiconductors BF1208 dual n-channel dual gate mosfet 11. revision history table 14: revision history document id release date data sheet status change notice doc. number supersedes BF1208_1 20050316 product data sheet - 9397 750 14254 -
philips semiconductors BF1208 dual n-channel dual gate mosfet 9397 750 14254 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 16 march 2005 21 of 22 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 16 march 2005 document number: 9397 750 14254 published in the netherlands philips semiconductors BF1208 dual n-channel dual gate mosfet 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 dynamic characteristics for ampli?er a. . . . . . . 5 8.1.1 graphics for ampli?er a . . . . . . . . . . . . . . . . . . 6 8.1.2 scattering parameters for ampli?er a . . . . . . . 10 8.1.3 noise data for ampli?er a . . . . . . . . . . . . . . . . 10 8.2 dynamic characteristics for ampli?er b. . . . . . 11 8.2.1 graphics for ampli?er b . . . . . . . . . . . . . . . . . 12 8.2.2 scattering parameters for ampli?er b . . . . . . . 17 8.2.3 noise data for ampli?er b . . . . . . . . . . . . . . . . 17 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 18 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 15 contact information . . . . . . . . . . . . . . . . . . . . 21

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